JPH0516196B2 - - Google Patents

Info

Publication number
JPH0516196B2
JPH0516196B2 JP58173835A JP17383583A JPH0516196B2 JP H0516196 B2 JPH0516196 B2 JP H0516196B2 JP 58173835 A JP58173835 A JP 58173835A JP 17383583 A JP17383583 A JP 17383583A JP H0516196 B2 JPH0516196 B2 JP H0516196B2
Authority
JP
Japan
Prior art keywords
layer
region
main surface
semiconductor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58173835A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6064481A (ja
Inventor
Junichiro Horiuchi
Hideyuki Yagi
Masao Tsuruoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58173835A priority Critical patent/JPS6064481A/ja
Publication of JPS6064481A publication Critical patent/JPS6064481A/ja
Publication of JPH0516196B2 publication Critical patent/JPH0516196B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP58173835A 1983-09-19 1983-09-19 半導体装置 Granted JPS6064481A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58173835A JPS6064481A (ja) 1983-09-19 1983-09-19 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58173835A JPS6064481A (ja) 1983-09-19 1983-09-19 半導体装置

Publications (2)

Publication Number Publication Date
JPS6064481A JPS6064481A (ja) 1985-04-13
JPH0516196B2 true JPH0516196B2 (en]) 1993-03-03

Family

ID=15968035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58173835A Granted JPS6064481A (ja) 1983-09-19 1983-09-19 半導体装置

Country Status (1)

Country Link
JP (1) JPS6064481A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63126243A (ja) * 1986-11-17 1988-05-30 Toshiba Corp 集積回路素子及びその製造方法
JPH04125023A (ja) * 1990-09-14 1992-04-24 Fuji Electric Co Ltd Gtoインバータのアーム短絡検出回路
JP4657614B2 (ja) * 2004-03-09 2011-03-23 Okiセミコンダクタ株式会社 半導体装置及び半導体装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49127576A (en]) * 1973-04-05 1974-12-06
JPS5146880A (en) * 1974-10-18 1976-04-21 Matsushita Electronics Corp Toranjisuta
JPS55115340A (en) * 1979-02-26 1980-09-05 Hitachi Ltd Semiconductor device
JPS56103460A (en) * 1980-01-21 1981-08-18 Mitsubishi Electric Corp Semiconductor device
JPS56112752A (en) * 1980-02-12 1981-09-05 Nec Corp Semiconductor device
JPS572567A (en) * 1980-06-06 1982-01-07 Nec Corp Semiconductor device
JPS577956A (en) * 1980-06-17 1982-01-16 Mitsubishi Electric Corp Semiconductor device
JPS5720476A (en) * 1980-07-10 1982-02-02 Mitsubishi Electric Corp Diode
JPS57169273A (en) * 1981-04-13 1982-10-18 Nippon Denso Co Ltd Semiconductor device
JPS5856352A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd 半導体集積回路

Also Published As

Publication number Publication date
JPS6064481A (ja) 1985-04-13

Similar Documents

Publication Publication Date Title
US5378920A (en) High breakdown voltage semiconductor device
US4831424A (en) Insulated gate semiconductor device with back-to-back diodes
CA1175953A (en) Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
EP0450306B1 (en) High-speed diode and method for producing the same
US7391093B2 (en) Semiconductor device with a guard-ring structure and a field plate formed of polycrystalline silicon film embedded in an insulating film
JP2950025B2 (ja) 絶縁ゲート型バイポーラトランジスタ
JP4631268B2 (ja) 半導体装置
JP3432708B2 (ja) 半導体装置と半導体モジュール
JPH05235014A (ja) 半導体装置
JP2020170859A (ja) 半導体装置
JPS6146066B2 (en])
JPH0516196B2 (en])
JPH06177242A (ja) 半導体集積回路装置
JP3311166B2 (ja) 絶縁ゲート型半導体装置
JP4029549B2 (ja) 半導体装置
JP3217552B2 (ja) 横型高耐圧半導体素子
JPS6290964A (ja) 集積回路保護構造
US6002158A (en) High breakdown-voltage diode with electric-field relaxation region
JP2629426B2 (ja) 2重拡散型misfetを備えた半導体装置及びその製造方法
JPH0120549B2 (en])
JPS6327865B2 (en])
JP2518929B2 (ja) バイポ―ラ型半導体集積回路
JP3217484B2 (ja) 高耐圧半導体装置
JP2000058869A (ja) 半導体装置
JPH0677262U (ja) 半導体装置